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  Konyushenko, M.A.; Konashuk, A.S.; Sokolov, A.A.; Schäfers, F.; Filatova, E.O.: Effect of thermal annealing and Al₂O₃-interlayer on intermixing in the TiN/SiO₂/Si structure. Journal of Electron Spectroscopy and Related Phenomena 196 (2014), p. 117-120

10.1016/j.elspec.2013.12.001

Abstract:
The effect of post deposition annealing and Al2O3interlayer introduced between the film and substrate onthe nitrogen content in TiN films in TiN/SiO2/Si structures were studied using near-edge X-ray absorptionfine structure (NEXAFS) spectroscopy. It was established that: (i) the structure of the studied films corre-sponds to TiN1−xOx; (ii) annealing the system insignificantly decreases the concentration of the oxygenin the film; (iii) an Al2O3interlayer prevents diffusion of oxygen from SiO2and supports high nitrogencontent in the TiN-film.