Department Spin and Topology in Quantum Materials

Microscopy of functional devices

Resistive switching memory devices (ReRAM) show switch between resistive states by means of electrically meanings; commonly accepted to be due to oxygen vacancies displacement PEEM shows voltage driven cationic voltage driven accumulation/depletion.

Figure La_2/3Sr_1/3MnO_3:

• Top: Kelvin Prove Microscopy image of a writing and an erasing process
• Bottom: contact potential difference profile
• Right: PEEM images obtained on a modified LSMO surface at the La M₅ Mn L₃, and O K-edge

^{C. Moreno, C. Munuera, S. Valencia, F. Kronast, X. Obradors, C. Ocal.
Nano Letters 10, 3828 (2010)}