Brückner, S.; Döscher, H.; Kleinschmidt, P.; Hannappel, T.: In situ investigation of hydrogen interacting with Si(100). Applied Physics Letters 98 (2011), p. 211909/1-3
10.1063/1.3593195
Abstract:
Silicon surfaces are subject to intense interaction with hydrogen ambient common in vapor phase epitaxy. We distinguish characteristic configurations of vicinal Si(100) by in situ reflectance anisotropy spectroscopy: covered by protective oxides, cleaned by thermal annealing, and the formation of monohydrides during cooling. Even above 1000 K, most dangling bonds of the (2×1)-reconstructed surface are saturated by hydrogen, while stability of Si–H bonds in the process gas ambient requires temperatures well below 750 K. Adjustment of hydrogen coverage employing alternative process gases provides experimental access to hydrogen adsorption and desorption characteristics valid for annealing in vapor phase epitaxy ambient.