Bashouti, M.Y.; Youosefi, P.; Ristein, J.; Christiansen, S.: Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface. Journal of Physical Chemistry Letters 6 (2015), p. 3988–3993
Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si−Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to theformation and elimination of Si−Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si−Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.