Wu, H.-C.; Chaika, A.N.; Huang, T.-W.; Syrlybekov, A.; Abid, M.; Aristov, V.Yu.; Molodtsova, O.V.; Babenkov, S.V.; Marchenko, D.; Sanchez-Barriga, J.; Mandal, P.S.; Varykhalov, A.Yu.; Niu, Y.; Murphy, B.E.; Krasnikov, S..A.; Luebben, O.; Wang, J.J.; Liu, H.; Yang, L.; Zhang, H.; Abid, M.; Janabi, Y.T.; Molotkov, S.N.; Chang, C.-R.; Shvets, I.: Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries. ACS Nano 9 (2015), p. 8967-8975
10.1021/acsnano.5b02877

Abstract:
Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on–off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on–off ratio of 104 by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on–off current ratios using graphene on cubic-SiC.