Volobuev, V.V.; Mandal, P.S.; Galicka, M.; Caha, O.; Sánchez-Barriga, J.; Di Sante, D.; Varykhalov, A.; Khiar, A.; Picozzi, S.; Bauer, G.; Kacman, P.; Buczko, R.; Rader, O.; Springholz, G.: Giant Rashba Splitting in Pb1-xSnxTe(111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. Advanced Materials 29 (2017), p. 1604185/1-9
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Topological crystalline insulators such as Pb1-xSnxTe have attracted great interest due to the wide tunability of the topological properties through temperature and composition. Here we show that bulk Bi-doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting of the surface state that can be tuned by the doping level. Tight-binding calculations identify its origin as Fermi level pinning by trap states at the surface.