Bär, M.; Repins, I.; Contreras, M.A.; Weinhardt, L.; Noufi, R.; Heske, C.: Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers. Applied Physics Letters 95 (2009), p. 052106/1-3
10.1063/1.3194153
Abstract:
The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the “In-terminated” absorber.