Visitenkarte Prof. Dr. Thomas Hannappel

Prof. Dr. Thomas Hannappel

compound semiconductor solar cells, hybrid solar cells, interface analysis, dynamics

Veröffentlichungen (Auswahl)

2008


  • Döscher, H.; Hannappel, T.; Kunert, B.; Beyer, A.; Volz, K.; Stolz, W.: In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy. Applied Physics Letters 93 (2008), p. 172110/1-3

  • Lux-Steiner, M.Ch. ; Hannappel, Th. [Hrsg.]: Nanotechnologie für eine nachhaltige Energieversorgung : Symposium 29. - 30.11.2007 in Berlin. Berlin: FVS, 2008
    http://www.fv-sonnenenergie.de/publikationen/publikation/download/ws2008/

  • Seidel, U. ; Sagol, B.E. ; Szabo, N. ; Schwarzburg, K. ; Hannappel, T.: InGaAs/GaAsSb-interface studies in a tunnel junction of a low band gap tandem solar cell. Thin Solid Films 516 (2008), p. 6723-6728

  • Seidel, U.; Hannappel, T.: MOVPE preparation of InGaAs(100) surface reconstructions employing transient in-situ RDS. Journal of Crystal Growth 310 (2008), p. 2334-2338

  • Seidel, U.; Sagol, B.E.; Pettenkofer, C.; Hannappel, T.: Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(100) (4 x 2)/c(8 x 2) surface. Applied Surface Science 255 (2008), p. 722-724

  • Szabo, N.; Sagol, B.E.; Seidel, U.; Schwarzburg, K.; Hannappel, T.: InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions. Physica Status Solidi - Rapid Research Letters 2 (2008), p. 254-256

  • Szarko, J. ; Socaciu-Siebert, L. ; Neubauer, A. ; Hannappel, T. ; Eichberger, R.: Electron relaxation dynamics at the In-rich (100) surface of InP. In: Jin-Joo Song [u.a.] [Eds.] : Ultrafast phenomena in semiconductors and nanostructure materials XII : 20 - 23 January 2008, San Jose, California, USABellingham, Wash.: SPIE, 2008 (Proceedings of SPIE ; 6892). - ISBN 978-0-8194-7067-6, p. 68921M/1-10

  • Szarko, J.M.; Neubauer, A.; Bartelt, A.; Socaciu-Siebert, L.; Birkner, F.; Schwarzburg, K.; Hannappel, T.; Eichberger, R.: The ultrafast temporal and spectral characterization of electron injection from perylene derivatives into ZnO and TiO2 colloidal films. The Journal of Physical Chemistry C 112 (2008), p. 10542-10552

2007


  • Bork, T. ; McMahon, W.E. ; Olson, J.M. ; Hannappel, T.: Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(1 0 0) surfaces. Journal of Crystal Growth 298 (2007), p. 54-58

  • Sagol, B.E. ; Seidel, U. ; Szabo, N. ; Schwarzburg, K. ; Hannappel, T.: Basic concepts and interfacial aspects of high-efficiency III-V multijunction solar cells. Chimia 61 (2007), p. 775-779

  • Seidel, U. ; Schimper, H.-J. ; Kollonitsch, Z. ; Möller, K. ; Schwarzburg, K. ; Hannappel, T.: Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell. Journal of Crystal Growth 298 (2007), p. 777-781

2006


  • Kollonitsch, Z. ; Schimper, H.-J. ; Seidel, U. ; Willig, F. ; Hannappel, T.: In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE. Applied Surface Science 252 (2006), p. 4033-4038

  • Kollonitsch, Z.; Schimper, H.-J.; Seidel, U.; Möller, K.; Neumann, S.; Tegude, F.-J.; Willig, F.; Hannappel, T.: Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode. Journal of Crystal Growth 287 (2006), p. 536-540

  • McMahon, W.E.; Batyrev, I.G.; Hannappel, T.; Olson, J.M.; Zhang, S.B.: 5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces. Physical Review B 74 (2006), p. 033304/1-4

  • Schimper, H.-J. ; Kollonitsch, Z. ; Möller, K. ; Seidel, U. ; Bloeck, U. ; Schwarzburg, K. ; Willig, F. ; Hannappel, T.: Material studies regarding InP-based high-efficiency solar cells. Journal of Crystal Growth 287 (2006), p. 642-646

2005


  • Hannappel, T.: InP(100) -based interfaces for photovoltaics prepared via metal organic chemical vapor deposition. , Berlin, Freie Univ., Habil.-Schr., 2005

  • Letzig, T.; Schimper, H.-J.; Hannappel, T.; Willig, F.: P-H bonds in the surface unit cell of P-rich ordered InP(001) grown by metalorganic chemical vapor deposition. Physical Review B 71 (2005), p. 033308/1-4

  • Möller, K.; Töben, L.; Kollonitsch, Z.; Giesen, Ch.; Heuken, M.; Willig, F.; Hannappel, T.: In-situ monitoring and analysis of GaSb(100) substrate deoxidation. Applied Surface Science 242 (2005), p. 392-398

  • Töben, L.; Gundlach, L.; Ernstorfer, R.; Eichberger, R.; Hannappel, T.; Willig, F.; Zeiser, A.; Förstner, J.; Knorr, A.; Hahn, P.H.; Schmidt, W.G.: Femtosecond transfer dynamics of photogenerated electrons at a surface resonance of reconstructed InP(100). Physical Review Letters 94 (2005), p. 067601/1-4

2004


  • Hannappel T. ; McMahon W.E. ; Olson J.M.: An RDS, LEED, and STM study of MOCVD-prepared Si(1 0 0) surfaces. Journal of Crystal Growth 272 (2004), p. 24-29

  • Hannappel, T.; Visbeck, S.; Töben, L.; Willig, F.: Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques. Review of Scientific Instruments 75 (2004), p. 1297-1304

  • Kollonitsch, Z.; Möller, K.; Schimper, H.-J.; Giesen, Ch.; Heuken, M.; Willig, F.; Hannappel, T.: In situ monitored MOVPE growth of undoped and p-doped GaSb(1 0 0). Journal of Crystal Growth 261 (2004), p. 289-293

  • Töben, L.; Gundlach, L.; Hannappel, T.; Ernstorfer, R.; Eichberger, R.; Willig, F.: Dynamics of electron scattering between bulk states and the C1 surface state of InP(100). Applied Physics A 78 (2004), p. 239-245

2003


  • Möller, K.; Kollonitsch, Z.; Giesen, Ch.; Heuken, M.; Willig, F.; Hannappel, T.: Optical in situ monitoring of MOVPE GaSb(1 0 0) film growth. Journal of Crystal Growth 248 (2003), p. 244-248

  • Töben, L.; Hannappel, T.; Eichberger, R.; Möller, K.; Gundlach, L.; Ernstorfer, R.; Willig, F.: Two-photon photoemission as a probe of unoccupied and occupied surface states of InP(100). Journal of Crystal Growth 248 (2003), p. 206-210

2001


  • Hannappel, T.; Többen, L.; Möller, K.; Willig, F.: In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K. Journal of Electronic Materials 30 (2001), p. 1425-1428

  • Töben, L.; Hannappel, T.; Möller, K.; Crawack, H.-J.; Pettenkofer, C.; Willig, F.: RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100). Surface Science 494 (2001), p. L755-L760

  • Visbeck, S.; Hannappel, T.; Zorn, M.; Zettler, J.-T.; Willig, F.: Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K. Physical Review B 63 (2001), p. 245303/1-6

2000


  • Frisch, A.M.; Vogt, P.; Visbeck, S.; Hannappel, Th.; Willig, F.; Braun, W.; Richter, W.; Bernholc, J.; Schmidt, W.G.; Esser, N.: Angle resolved photoemission spectroscopy of the InP(001) surface. Applied Surface Science 166 (2000), p. 224-230

  • Hannappel, T.; Visbeck, S.; Zorn, M.; Zettler, J.-T.; Willig, F.: Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100). Journal of Crystal Growth 221 (2000), p. 124-128

  • Schmidt, W.G.; Esser, N.; Frisch, A.M.; Vogt, P.; Bernholc, J.; Bechstedt, F.; Zorn, M.; Hannappel, Th.; Visbeck, S.; Willig, F.; Richter, W.: Understanding reflectance anisotropy: surface-state signatures and bulk-related features in the optical spectrum of InP(001) (2X4). Physical Review B 61 (2000), p. 16335-16338

  • Vogt, P.; Frisch, A.M.; Hannappel, Th.; Visbeck, S.; Willig, F.; Jung, Ch.; Follath, R.; Braun, W.; Richter, W.; Esser, N.: Atomic structure and composition of the P-rich InP(001) surfaces. Applied Surface Science 166 (2000), p. 190-195