Institute Silicon Photovoltaics
Lasercrystallization in vaccum
The instute silicon photovoltaic operates two tools for liquid phase crystallization of silicon on glass by means of high power CW diodelasers. Depicted is the tool for crystallization under high-vacuum or inert- or forming-gas atmosphere. The following gases can be used during the crystallization process: argon, nitrogen, forming gas (5% hydrogen in nitrogen).
- CW-diode laser emitting at 808nm
- Beamgeometry:52mm x 0,3 mm (1/e2)
- optical power < 500W
- Substrateheater up 500°C (sample surface)
- maximum substrate size: 50 mm x 100 mm