Nickel, N. H.: Hydrogen incorporation in semiconductors. Physical Review Letters 260 (2023), p. 2300309/1-5
10.1002/pssb.202300309
Open Access Version
Abstract:
In many materials, the presence of hydrogen influences the structural and electronic properties. An equilibrium model based on statistical mechanics is presented that describes the unintentional incorporation of hydrogen. As an example, the H concentration in four different semiconductors, namely, c-Si, c-Ge, ZnO, and & beta;-Ga2O3, is measured using H effusion. The measured H concentration ranges from 5.2x1016 to 1.1x1018 cm-3. From the effusion data, the position of the H chemical potential and the H binding energies are derived.