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  Fenske, F. ; Gorka, B.: Highly phosphorus-doped crystalline Si layers grown by pulse-magnetron sputter deposition. Journal of Applied Physics 105 (2009), p. 074506/1-5

Abstract:
Homoepitaxy of highly phosphorus doped silicon films was investigated using the pulse-magnetron sputter deposition technique. The films were grown, 450 nm thick, on Si(100) and Si(111) wafers at low substrate temperatures Ts of 450-550 °C and post-treated by rapid thermal annealing (RTA) and plasma hydrogenation (PH). In case of films grown on Si(100), at all values of TS post-growth treatment by RTA resulted in an increase of the dopant activation up to 100% and of the Hall mobility to about bulk-like values of 50 cm2V-1s-1. This result suggests high structural quality of the epitaxial films on Si(100). The Si(111) films, which are typically more defective, exhibit a completely different behavior with a strong dependence of the electrical dopant activation and the Hall mobility on Ts. By post-treatment a maximum P donor activation level of 22% could be obtained. The variation of the post-treatment procedure (RTA+PH and PH+RTA) for the films deposited at high Ts showed that PH results only in minor changes of the film properties. The different influence of RTA and PH is discussed in terms of the different defect structure of the films. These investigations reveal that high Ts and after treatment by RTA are the main preconditions for optimal electrical film properties.