Gorka, B. ; Rau, B. ; Dogan, P. ; Becker, C. ; Ruske, F. ; Gall, S. ; Rech, B.: Influence of Hydrogen Plasma on the Defect Passivation of Polycrystalline Si Thin Film Solar Cells. Plasma Processes and Polymers 6 (2009), p. S36-S40
10.1002/ppap.200930202
Abstract:
A parallel plate radio-frequency (rf) plasma setup was used for the hydrogen passivation (HP) of polycrystalline silicon (poly-Si) thin film solar cells. The influence of hydrogen pressure p and electrode gap d on breakdown voltage Vbrk was investigated. The minimum in Vbrk shifted with higher pressures towards higher p∙d values. Cell test structures provided by CSG Solar AG were used to examine the influence of p and d on the open circuit voltage VOC. The highest VOC’s were achieved where Vbrk had its minimum. HP strongly improved the VOC. After plasma treatment it was doubled to 450 mV. Optimized parameters were then applied to different poly-Si solar cells prepared by electron beam evaporation.