• 
  Grzanna, J.; Notz, T.; Lewerenz, H.J.: Model for current oscillations at the Si/electrolyte contact: Extension to spatial resolution. ECS Transactions 16 (2008), p. 173-180

10.1149/1.2982553

Abstract:
A morphological model is given for the anodic oxidation of n-type silicon in fluoride containing solution in a potentiostatic arrangement. An earlier introduced macroscopic version of the model is extended from temporal to spatio-temporal resolution using a cellular automate. The prediction of the macroscopic model that lattice mismatch between silicon and its oxide leads to stress and stress leads to two types of oxides in the case of photocurrent oscillation is approved by the cellular automate model. The oxide types differ in stability against the etching process. Both oxide types are arranged in clusters which alternate at the electrode surface. Each cluster is in the size of 80-100 nm.