Becker, C. ; Conrad, E. ; Dogan, P. ; Fenske, F. ; Gorka, B. ; Hänel, T. ; Lee, K.Y. ; Rau, B. ; Ruske, F. ; Weber, T. ; Berginski, M. ; Hüpkes, J. ; Gall, S. ; Rech, B.: Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells. Solar Energy Materials and Solar Cells 93 (2009), p. 855-858
10.1016/j.solmat.2008.09.059
Abstract:
The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700-nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2Ohm after 22 h annealing at 600 °C and only slightly increases for a 200s heat treatment at 900 °C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 °C.