Angermann, H. ; Uredat, S. ; Zettler J.-T.: Surface Texturization and Interface Passivation of Mono- and Polycrystalline Silicon Substrates: Evaluation of the Wet Chemical Treatments by UV-NIR-Reflectance. In: 24th European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Hamburg, Germany, 21 - 25 September 2009Munich: WIP, 2009, p. 1954-1957
Abstract:
The relations between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated on as-cut, saw damage etched and textured mono-crystalline silicon substrates for solar cell manufacturing. Surface sensitive techniques, the field-modulated surface photovoltage (SPV), total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced texture, nano-roughness and electronic properties of polished and textured silicon substrates. The correlation between UV reflectance and SPV measured surface state-density has been investigated. As a result, the different contributions of micron-sized texture and nanometer-sized surface roughness to the reflectance signal have been separated and a measurement set-up and optical model for routine evaluation of wet-chemical surface texturization in production processes has been established.