Amkreutz, D. ; Müller, J. ; Schmidt, M. ; Haschke, J. ; Hänel, T. ; Schulze, T.F.: Optical and Electrical Properties of Electron Beam Crystalised Thin Film Silicon Solar Cells on Glass Substrates. In: 24th European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Hamburg, Germany, 21 - 25 September 2009Munich: WIP, 2009, p. 2506-2509
Abstract:
Polycrystalline silicon on glass has been prepared by zone melting crystallization of 7-15 µm thick amorphous/nano-crystalline silicon layers with a line shaped electron beam. Silicon was deposited onto glass substrates, covered by SiC/SiC:B-layers, which act as adhesive layer and barrier against impurity diffusion. Si crystallites are grown ranging from several 100µm up to cm in length. A 30 nm thin a-Si:H(n) emitter deposited by PECVD and covered with an 80 nm ZnO layer and an Al grid completes the solar cell structure glass/SiC/poly-Si/a-Si:H/ZnO/Al. In the planar cell without any light trapping and without post annealing, open circuit voltages of 487mV, short circuit currents up to 12.6mA•cm-2 and a fill factor of 63% resulting in 3.5% efficiency have been obtained.