Stempel, T. ; Muñoz, A.G. ; Skorupska, K. ; Lublow, M. ; Kanis, M. ; Lewerenz, H.J.: Surface chemistry and nanotopography of step-bunched silicon surfaces: in-system SRPES and SPM investigations. ECS Transactions 19 (2009), p. 403-410
10.1149/1.3120720
Abstract:
The formation of step bunching was observed by atomic force microscopy on n-type Si(111) surfaces during the electrodeposition of noble metals under semiconductor depletion conditions. The surface chemical analysis performed by synchrotron radiation photoelectron spectroscopy (SRPES) indicates the formation of an ultra-thin oxide film along with the topological transformation. Step bunching is interpreted in terms of site-specific etching controlled by the reactivity of kink sites and step edges together with the surface accumulation of holes supplied by the reduction of Pt-chloride complexes via the valence band.