Supplie, O.; Hannappel, T.; Pristovsek, M.; Döscher, H.: In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces. Physical Review B 86 (2012), p. 035308/1-5
10.1103/PhysRevB.86.035308
Abstract:
We derive an analytical expression to extract the III-V/Si(100) surface and interface dielectric anisotropy from multisample optical in situ data. Based on the established preparation of P-rich GaP/Si(100) and GaP(100) surfaces in vapor-phase ambient, thin GaP films on Si(100) serve as a model system, where we demonstrate the decomposition of reflection anisotropy spectra to obtain surface and interface signals. The resulting surface dielectric anisotropy of P-rich GaP/Si(100) agrees well with that of a homoepitaxial P-rich GaP(100) reference due to consideration of antiphase disorder in our analytical approach. Hence, we are able to calculate interface dielectric anisotropy spectra of individual GaP/Si(100) samples. Their characteristic line shape provides in situ access to nucleation mechanisms in polar-on-nonpolar heteroepitaxy.