Gluba, M.A.; Nickel, N.H.; Hinrichs, K.; Rappich, J.: Improved passivation of the ZnO/Si interface by pulsed laser deposition. Journal of Applied Physics 113 (2013), p. 043502/1-4
10.1063/1.4788675

Abstract:
Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of ≈10^12cm^-2. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.