Solovan, M.N.; Brus, V.V.; Maryanchuk, P.D.; Kovalyuk, T.T.; Rappich, J.; Gluba, M.: Kinetic Properties of TiN Thin Films Prepared by Reactive Magnetron Sputtering. Physics of the Solid State 55 (2013), p. 2234–2238
10.1134/S1063783413110255

Abstract:
Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ~10^22 cm^–3, while electron scattering occurs at ionized titanium atoms.